Liquid-seal Czochralski growth of gallium arsenide
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Notizen: Herstellung von InAs- und GaAs-Einkristallen
2. Liquid encapsulation techniques: The use of an inert liquid in suppressing dissociation during the melt-growth of InAs and GaAs crystals
3. Liquid Encapsulated Czochralski Growth of GaAs
4. Pressure balancing: A technique for suppressing dissociation during the melt-growth of compounds
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1. Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant;Crystal Growth Technology;2010-07-19
2. Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation;Journal of Crystal Growth;2004-09
3. Dislocations in GaAs Crytals Grown by As-Pressure Controlled Czochralski Method;Defects and Properties of Semiconductors;1987
4. The theoretical and experimental fundamentals of decreasing dislocations in melt grown GaAs and InP;Journal of Crystal Growth;1986-12
5. The theory and practice of dislocation reduction in GaAs and InP;Journal of Crystal Growth;1984-12
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