Investigation of Si-substrate preparation for GaAs-on-Si MBE growth-Reference-Cited by-同舟云学术

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Investigation of Si-substrate preparation for GaAs-on-Si MBE growth

Published:1995-12 Issue:1-4 Volume:157 Page:300-303
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kayambaki M.,Callec R.,Constantinidis G.,Papavassiliou Ch.,Löchtermann E.,Krasny H.,Papadakis N.,Panayotatos P.,Georgakilas A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

2. A preliminary study of impurities and defects in Si-MBE layers

3. Achievements and limitations in optimized GaAs films grown on Si by molecular‐beam epitaxy

4. Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular beam epitaxy

5. Thermal Desorption from Si(111) Surfaces with Native Oxides Formed During Chemical Treatments

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of ultrathin AlN prelayers on the spontaneous growth of GaN nanowires by plasma assisted molecular beam epitaxy;Journal of Crystal Growth;2019-05

2. Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires;Journal of Crystal Growth;2016-05

3. Synthesis and characterization of gadolinium nanostructured materials with potential applications in magnetic resonance imaging, neutron-capture therapy and targeted drug delivery;Journal of Nanoparticle Research;2010-01-19

4. Epitaxial Growth and Magnetic Properties of Half-Metallic Fe$_{3}$O$_{4}$ on Si(100) Using MgO Buffer Layer;IEEE Transactions on Magnetics;2009-10

5. Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE;Journal of Crystal Growth;2009-03

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