Strain-stabilized structures on silicon grown with MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Structural, electronic, and optical properties of ordered Si1−Ge C alloys: A first principles study;Journal of Alloys and Compounds;2015-05
2. Direct optical measurement of the valence band offset of p+ Si1−x−yGexCy/p− Si(100) by heterojunction internal photoemission;Applied Physics Letters;1998-12-14
3. Electronic properties of Si/Si[sub 1−x−y]Ge[sub x]C[sub y] heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
4. Direct Optical Measurement of the valence band offset of p+ Si1−x−yGexCy/p− Si (100) by Heterojunction Internal Photoemission;MRS Proceedings;1998
5. Measurement of band offsets in Si/Si[sub 1−x]Ge[sub x] and Si/Si[sub 1−x−y]Ge[sub x]C[sub y] heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-07
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