The vapour phase growth of GaxIn1−xP epitaxial layers

Author:

Joyce B.D.,Fairhurst K.M.,Clarke R.C.,Born P.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Proc. Ninth Intern. Conf. on Physics of Semiconductor;Hilsum,1968

2. STIMULATED EMISSION IN In1 ‐xGaxP

3. The preparation of high purity epitaxial InP

4. Intern. Symp. on GaAs and Related Compounds;Joyce;Inst. of Physics and Physical Soc. Conf. Series No. 9,1970

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3. Evaluation of composition and growth rate of GaxIn1 − xP vapour phase epitaxy;Materials Chemistry and Physics;1996-07

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