Quantitative evaluation of the perfection of an epitaxial film grown by vapor deposition as determined by thermal energy atom scattering
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference40 articles.
1. Photoluminescence and reflection high‐energy electron diffraction dynamics study of the interfaces in molecular beam epitaxially grown GaAs/Al0.33Ga0.67As(100) single quantum wells
2. Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wells
3. Dynamics of film growth of GaAs by MBE from Rheed observations
4. Damped oscillations in reflection high energy electron diffraction during GaAs MBE
5. Phase-Locked Epitaxy Using RHEED Intensity Oscillation
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