MBE growth and properties of Fe3(Al,Si) on GaAs(100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
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2. Theoretical investigation the growth of Fe3Si on GaAs: Stability and electronic properties of Fe3Si/GaAs(0 0 1), (1 1 0) via DFT;Applied Surface Science;2020-03
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4. INFLUENCE OF Fe/Si THICKNESS RATIO ON STRUCTURAL AND MAGNETIC PROPERTIES OF Fe3Si FILMS FABRICATED BY SPUTTERING;Surface Review and Letters;2019-01
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