Characteristics of ZnCdTe grown on (100) GaAs substrate by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Intrinsic infrared detectors
2. Recent developments in HgCdTe and HgZnTe growth from Te solutions
3. Growth of CdTe single crystals by THM (travelling heater method) and its repetition effect
4. CdZnTe substrate impurities and their effects on liquid phase epitaxy HgCdTe
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1. Study of percolation and modeling of the order–disorder transition for zincblende–diamond structures: Percolation and the existence of a unique band of events;Computational Condensed Matter;2014-12
2. Influence of crystalline quality on the thermal, optical and structural properties of Cd1−xZnxTe for low zinc concentration;Journal of Crystal Growth;2001-11
3. Growth of Hg1−x(Cd1−yZny)xTe epilayers on (100) Cd1−yZnyTe/GaAs substrates by ISOVPE;Materials Science and Engineering: B;1999-12
4. Growth and Evaluation of Cd1-yZnyTe Epilayers on (100) GaAs Substrates by Hot Wall Epitaxy;Japanese Journal of Applied Physics;1998-10-15
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