Hydrostatic pressure study of indium DX-like centers in MBE-grown CdTe and CdMnTe layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Direct proof of two-electron occupation of Ge-DXcenters in GaAs codoped with Ge and Te
2. Non-Γ donor levels and kinetics of electron transfer in n-type CdTe
3. Persistent photoconductivity in donor‐doped Cd1−xZnxTe
4. Lattice relaxation ofDX-like donors inZnxCd1−xTe
5. Persistent photoconductivity and photoionization of deep electron traps in Ga-dopedCd1−xMnxTe
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1. 2D electron gas in chalcogenide multilayers;Chalcogenide;2020
2. Compensated donors in semi-insulating Cd1−xMnxTe:In crystals;Journal of Crystal Growth;2018-10
3. Persistent photoconductivity of amorphous Hg0.78Cd0.22Te:In films;Journal of Semiconductors;2016-10
4. On the negative Hubbard correlation energy of the DX center in In-doped CdMnTe;Journal of Applied Physics;2004-02
5. Effects of hydrogenation and annealing on the shallow donor-band recombination in In-doped CdTe epitaxial layers grown on p-CdTe (211) substrates;Journal of Physics and Chemistry of Solids;2000-05
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