Steps on facets of solution grown GaAs epitaxial layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference43 articles.
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1. Model for faceting in a kinetically controlled crystal growth;Physical Review E;1999-01-01
2. Monomolecular steps of ultra-low density on (100) growth faces of liquid phase epitaxial GaAs;Journal of Crystal Growth;1994-04
3. Dislocation replication and annihilation in InP homoepitaxial layers grown by liquid phase epitaxy;Materials Science and Engineering: B;1990-09
4. The kinetics of fast steps on crystal surfaces and its application to the molecular beam epitaxy of silicon;IBM Journal of Research and Development;1988-11
5. Extremely flat layer surfaces in liquid phase epitaxy of GaAs and AlxGa1−xAs;Journal of Crystal Growth;1988-02
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