Controlled carbonization of Si(001) surface using hydrocarbon radicals in ultrahigh vacuum
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
2. Low‐Temperature Growth of 3 C ‐ SiC on Si Substrate by Chemical Vapor Deposition Using Hexamethyldisilane as a Source Material
3. Single‐crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor deposition
4. Atomic level control in gas source MBE growth of cubic SiC
5. Heteroepitaxial growth of single crystalline 3C‐SiC on Si substrates by gas source molecular beam epitaxy
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1. Growth mechanisms of 3C-SiC layer by carbonization of Si(100) substrates in high-vacuum region;Japanese Journal of Applied Physics;2014-03-27
2. Direct growth of cubic AlN and GaN on Si (001) with plasma‐assisted MBE;physica status solidi (c);2003-11-24
3. Growth Chemistry and Interface Characterization of Single Crystal SiC on Modified Si Surface.;JOURNAL OF CHEMICAL ENGINEERING OF JAPAN;2001
4. Reaction of Si(111) surface with acetone;Thin Solid Films;2000-11
5. Epitaxial Growth, Characterization, and Properties of SiC;Electric Refractory Materials;2000-08-24
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