High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy-Reference-Cited by-同舟云学术

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High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy

Published:1994-03 Issue:1-4 Volume:136 Page:306-309
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yan Chunhui,Sun Dianzhao,Guo Hongxi,Li Xiaobing,Zu Shirong,Huang Yunheng,Zheng Yiping,Kong Meiying

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference5 articles.

1. InGaP/InGaAlP double‐heterostructure and multiquantum‐well laser diodes grown by molecular‐beam epitaxy

2. Room‐temperature continuous‐wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition

3. Aging characteristics of AlGaInP/GaInP visible-light lasers (λL = 678 nm)

4. GaInP/AlInP Quantum Well Structures and Double Heterostructure Lasers Grown by Molecular Beam Epitaxy on (100) GaAs

5. High‐optical‐quality GaInP and GaInP/AlInP double heterostructure lasers grown on GaAs substrates by gas‐source molecular‐beam epitaxy

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy;Applied Physics Letters;2013-07-15

2. Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures;The European Physical Journal Applied Physics;2004-07

3. Effect of deep levels on the characteristics of InGa1−xP/In0.20Ga0.80As/GaAs high-electron mobility transistor grown by solid-source MBE;Journal of Crystal Growth;2000-07

4. Molecular beam epitaxial growth of high performance In0.48Ga0.52P/In0.20Ga0.80As/GaAs p-HEMTs using a valved phosphorus cracker cell;Materials Science and Engineering: B;2000-05

5. In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular-beam epitaxy using a valved phosphorus cracker cell;International Journal of Electronics;2000-03

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