Molecular beam epitaxial growth of high performance In0.48Ga0.52P/In0.20Ga0.80As/GaAs p-HEMTs using a valved phosphorus cracker cell
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage
2. InGaP/InGaAs HFET with high current density and high cut-off frequencies
3. The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
4. Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers
5. High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy
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