MBE growth mechanism of ZnSe: Growth rate and surface coverage
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. MBE growth mechanisms of ZnSe.
2. RHEED Observation on (001)ZnSe Surface: MBE Surface Phase Diagram and Kinetic Behavior of Zn And Se Adatoms
3. Growth of undoped ZnSe on (100) GaAs by molecular‐beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio
4. Reflection high-energy electron diffraction observations during growth of ZnSxSe1−x(0≤x≤1) by molecular-beam epitaxy
5. Growth and Optical Properties of Wide-Gap II-VI Low Dimensional Semiconductors;Yao,1989
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1. Molecular Beam Epitaxy of Wide Gap II−VI Laser Heterostructures;Molecular Beam Epitaxy;2018
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3. Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy;Applied Surface Science;2010-09
4. Reflection high-energy electron diffraction (RHEED) study of MBE growth of ZnSe on GaAs(1 1 1)B surfaces;Applied Surface Science;2001-09
5. A detailed surface phase diagram for ZnSe MBE growth and ZnSe/GaAs(0 0 1) interface studies;Journal of Crystal Growth;2000-06
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