Vapour phase epitaxy of InP: Growth kinetics and controlled doping-Reference-Cited by-同舟云学术

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Vapour phase epitaxy of InP: Growth kinetics and controlled doping

Published:1979-08 Issue:2 Volume:47 Page:267-273
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chevrier J.,Huber A.,Linh N.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. InP Gunn-Effect Devices for Millimeter-Wave Amplifiers and Oscillators

2. Proc. 6th Intern. Symp. on GaAs;Fairman;Inst. Phys. Conf. Ser.,1976

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spatial Variations in the Epitaxial Growth of InP and InGaAs by Trichloride VPE and Their Physical and Chemical Origins;Journal of The Electrochemical Society;1992-04-01

2. Epitaxial growth of InP and related alloys;Progress in Crystal Growth and Characterization;1986-01

3. Revealing of defects in InP by shallow (submicron) photoetching;Journal of Applied Physics;1985-07

4. Vapour phase growth of InP from the In-PH3-HCl-H2 system;Journal of Crystal Growth;1984-01

5. THE VAPOUR PHASE ETCHING AND N-TYPE DOPING OF INDIUM PHOSPHIDE;Le Journal de Physique Colloques;1982-12

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