The fabrication of back-gated high electron mobility transistors — a novel approach using MBE regrowth on an in situ ion beam patterned epilayer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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4. Mobility Modulation of the Two-Dimensional Electron Gas Via Controlled Deformation of the Electron Wave Function in Selectively Doped AlGaAs-GaAs Heterojunctions
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1. Indium-bond-and-stop-etch (IBASE) technique for dual-side processing of thin high-mobility GaAs/AlGaAs epitaxial layers;Applied Physics Letters;2023-06-05
2. In situ scanning tunneling microscope studies of high-energy, focused ion implantation of Ga into GaAs: Direct observation of ion beam profiles;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07
3. A method to profile ion beam line exposures in situ using STM;Microelectronic Engineering;1998-03
4. Characterization of Si-doped layer in GaAs fabricated by a focused ion beam/molecular beam epitaxy combined system;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-11
5. Formation of narrow channels using split back-gates defined byin situfocused ion beam lithography;Semiconductor Science and Technology;1997-01-01
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