Initial growth layers and critical thickness of InAs heteroepitaxy on GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference32 articles.
1. First stages of the MBE growth of InAs on (001)GaAs
2. Lattice relaxation of InAs heteroepitaxy on GaAs
3. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
4. Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy
5. Growth processes and relaxation mechanisms in the molecular beam epitaxy of InAs/GaAs heterostructures
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