The growth and some properties of GaxIn1−xSb
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. The gunn effect and conduction band structure in GaxIn1−xSb alloys
2. Three-level oscillator: a new form of transferred-electron device
3. G.M. Blom and T.S. Plaskett, to be published.
4. GaSb Prepared from Nonstoichiometric Melts
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1. Growth and characterization of quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb;AIP Advances;2022-01-01
2. Ga-In -Sb (Gallium-Indium-Antimony);Non-Ferrous Metal Systems. Part 1;2006
3. Experimental study of the solid–liquid interface dynamics and chemical segregation in concentrated semiconductor alloy Bridgman growth;Journal of Crystal Growth;2005-03
4. Numerical analysis of solute distribution and interface stabilization during experimental Bridgman growth of concentrated GaInSb alloys;Journal of Crystal Growth;2005-02
5. The influence of temperature gradient and lowering speed on the melt–solid interface shape of GaxIn1−xSb alloy crystals grown by vertical Bridgman technique;Journal of Crystal Growth;1999-06
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