Formation of high mobility two-dimensional electron gas at etch-regrown AlGaAs/GaAs interface prepared by chlorine gas etching and MBE in an UHV multichamber system-Reference-Cited by-同舟云学术

Formation of high mobility two-dimensional electron gas at etch-regrown AlGaAs/GaAs interface prepared by chlorine gas etching and MBE in an UHV multichamber system

Published:1993-02 Issue:1-4 Volume:127 Page:877-880
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kadoya Y.,Noge H.,Kano H.,Sakaki H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. Enhanced crystallographic selectivity in molecular beam epitaxial growth of GaAs on mesas and formation of (001)‐(111)Bfacet structures for edge quantum wires

2. Proc. 15th Intern. Symp. on GaAs and Related Compounds;Miyamoto,1989

3. Molecular‐beam‐epitaxial growth ofn‐AlGaAs on clean Cl2‐gas etched GaAs surfaces and the formation of high mobility two‐dimensional electron gas at the etch‐regrown interfaces

4. Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures

5. Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature Mobility

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1. Electronic properties of etched–regrown heterostructure interfaces;Journal of Crystal Growth;2003-04

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3. Characterization of in situ etched and molecular beam epitaxy regrown GaAs interfaces using capacitance–voltage measurements, far infrared spectroscopy, and magnetotransport measurements;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

4. Ultraclean etching of GaAs by HCl gas and in situ overgrowth of (Al)GaAs by molecular beam epitaxy;Journal of Applied Physics;1998-01

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