On the potential of δ-doping for AlInAs/GaInAs HEMTs grown by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP
2. Ultra-high gain, low noise monolithic InP HEMT distributed amplifier from 5 to 40 GHz
3. Proc. 4th Intern. Conf. on InP and Related Materials;Streit,1992
4. MBE growth and electrical behaviour of single and double Si δ-doped InGaAs-layers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy;Solid-State Electronics;1997-09
2. Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures;Journal of Crystal Growth;1995-05
3. Improved inverted AlInGa/GaInAs two-dimensional electron gas structures for high quality pseudomorphic double heterojunction AlInAs/GaInAs high electron mobility transistor devices;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-09
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