The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Strain-generated electric fields in [111] growth axis strained-layer superlattices
2. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
3. Molecular beam epitaxy growth of GaAs/AlAs double-barrier resonant tunnelling devices on (311)A substrates
4. Confined phonons in (GaAs)n1(AlAs)n2superlattices grown along the [012] direction
5. Patterned quantum well semiconductor injection laser grown by molecular beam epitaxy
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