Real-time observations of III-V growth on patterned substrates by μ-RHEED
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Crystallographic analysis and observation of surface micro-areas using microprobe reflection high-energy electron diffraction
2. Real-time μ-RHEED observations of GaAs surfaces during growth with alternating source supply
3. Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high-energy electron diffraction
4. In situ scanning microprobe reflection high-energy electron diffraction observation of GaAs surfaces during molecular-beam epitaxial growth
5. Surface diffusion length during MBE and MOMBE measured from distribution of growth rates
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1. Oval Defects in the MBE Grown AlGaAs/InGaAs/GaAs and InGaAs/GaAs Structures;Crystal Research and Technology;1999-06
2. Morphology of island nuclei in epitaxial GaAs/Si;Materials Letters;1997-06
3. Orientation-dependent Ga surface diffusion in molecular beam epitaxy of GaAs on GaAs patterned substrates;Journal of Applied Physics;1997-06
4. Facet generation during molecular beam epitaxy of GaAs/AlGaAs multilayers on GaAs (001) patterned substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07
5. Beam geometrical effects on planar selective area epitaxy of heterostructures;Journal of Crystal Growth;1996-07
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