1. Coefficient representing the deformation of the silicon crystal lattice as a result of diffusion of boron and antimony;Smirnov;Sov. Phys. Solid Stage,1977
2. Changes in the crystal lattice constant of silicon due to the diffusion of boron, arsenic, and antimony;Smirnov;Sov. Phys. Dokl.,1975
3. Properties of the motion of dislocation loop segments formed in heavily doped silicon crystals;Milevskii;Sov. Phys. Solid State,1980
4. A thermally isolated microstructure suitable for gas sensing applications;Huff;Proc. IEEE Solid-State Sensor and Actuator Workshop, Hilton Head, SC, U.S.A.,691988
5. The effect of charged impurities on the yield point of silicon;Siethoff;Phys. Status Solidi,1970