Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan-Reference-Cited by-同舟云学术

Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan

Published:1990-04 Issue:1-3 Volume:23 Page:931-934
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Esashi Masayoshi,Nakano Akira,Shoji Shuichi,Hebiguchi Hiroyuki

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Bonding techniques for solid state pressure sensors;Knecht;Tech Digest, 4th Int. Conf. Solid-State Semors and Actuators (Tramducers '87), Tokyo, Japan,251987

2. Anodic bonding of imperfect surfaces;Anthony;J. Appl. Phys.,1983

3. Silicon-to-silicon direct bonding method;Shimbo;J. Apll. Phys.,1986

4. Low-temperature electrostatic silicon-to-silicon seals using sputtered borosilicate glass;Brooks;J. Electrochem. Soc.,1972

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