Plasma-deposited silicon nitride films with low hydrogen content for amorphous silicon thin-film transistors application-Reference-Cited by-同舟云学术

Plasma-deposited silicon nitride films with low hydrogen content for amorphous silicon thin-film transistors application

Published:1993-06 Issue: Volume:37-38 Page:333-336
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Campmany J.,Andújar J.L.,Canillas A.,Cifre J.,Bertran E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Plasma deposition of SiNxHy: process chemistry vs. film properties;Smith;Symp. Charact. PECVD Proc., MRS Fall Meet., Boston, MA, USA,1989

2. Mechanism of SiNxHy deposition from NH3-SiH4 plasma;Smith;J. Electrochem. Soc.,1990

3. Effects of the deposition sequence on amorphous silicon thin-film transistors;Hiranaka;Jpn. J. Appl. Phys.,1989

4. Mechanism of SiNyHy deposition from N2-SiH4 plasma;Smith;J. Vac. Sci. Technol.,1990

5. Real time controlled r.f. reactor for deposition of a-Si:H thin films;Andújar;Vacuum,1989

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