An investigation of the anisotropic etching of (100) silicon using cesium hydroxide-Reference-Cited by-同舟云学术

An investigation of the anisotropic etching of (100) silicon using cesium hydroxide

Published:1991-11 Issue:2 Volume:29 Page:121-126
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Yam J.D.Ip,Santiago-Aviles J.J.,Zemel J.N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Two-way etch — anisotropic etching for forming isolation slots;Waggener;Electronics,1967

2. The etching of deep vertical-walled patterns in silicon;Stoller;RCA Rev.,1970

3. Anisotropic etching of silicon with KOHH2O-isopropyl alcohol;Price,1973

4. Anisotropic etching of silicon;Bean;IEEE Trans. Electron Devices,1978

5. Chemical etching of silicon, germanium gallium arsenide, and gallium phosphide;Kern;RCA Rev.,1978

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