Pressure-sensitive insulated gate field-effect transistor (PSIGFET)

Author:

Suminto James T.,Ko Wen H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. A high-sensitivity integrated circuit capacitive pressure transducer;Ko;IEEE Trans. Electron Devices,1982

2. Capacitive pressure transducers with integrated circuits;Ko;Sensors and Actuators,1983

3. An IC piezoresistive pressure sensor for biomechanical instrumentation;Samaun;IEEE Trans. Biomed. Eng.,1973

4. Integrated signal conditioning for silicon pressure sensors;Borky;IEEE Trans. Electron Devices,1979

5. Development of a miniature pressure transducer for biomedical applications;Ko;IEEE Trans. Electron Devices,1979

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Performance Optimization of Pressure Sensor Based on Suspended Gate MOSFET;Advanced Engineering Forum;2018-11

2. Capacitive Sensors;Sensors;2008-03-20

3. FET pressure sensor and iterative method for modelling of the device;Sensors and Actuators A: Physical;2002-04

4. Electrical modeling of a pressure sensor MOSFET;Sensors and Actuators A: Physical;2001-10

5. Fet Pressure Sensor and Iterative Method for Modelling of the Device;Transducers ’01 Eurosensors XV;2001

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