First-principle calculations of structural stability of II-O1−xVIx (II-Zn, Cd and VI-S, Se, Te) ordered chalcopyrite semiconductors
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films
2. S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method
3. Effect of oxygen on the electronic band structure in ZnOxSe1−x alloys
4. Bandgap Engineering of ZnO Using Se
5. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
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1. Exploring structural phase transition, electronic and optical characteristics of optoelectronic phosphides XSiP2 (X = Mg, Cd, and Zn) through First principle computation;Journal of Molecular Modeling;2024-06-10
2. The pressure effect on optoelectronic and mechanical properties of chalcopyrite BeSiN2;Materials Today Communications;2020-09
3. Effect of Pressure on the Stability and Electronic Structure of ZnO0.5S0.5 and ZnO0.5Se0.5;Journal of Electronic Materials;2017-08-09
4. Pressure-induced structural transition in chalcopyrite ZnSiP2;Applied Physics Letters;2017-05
5. Conversion of optically isotropic to anisotropic CdSxSe1−x (0⩽x⩽1) alloy with S concentration;Computational Materials Science;2013-09
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