The effects of temperature and frequency changes on the electrical characteristics of hot-injected Cu2MnSnS4 chalcogenide-based heterojunction-Reference-Cited by-同舟云学术

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The effects of temperature and frequency changes on the electrical characteristics of hot-injected Cu2MnSnS4 chalcogenide-based heterojunction

Published:2020-03 Issue: Volume:580 Page:411821
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Sarilmaz Adem,Ozel Faruk,Karabulut Abdulkerim,Orak İkram,Şahinkaya Mehmet Akif

Funder

Karamanoglu Mehmetbey University

TUBITAK

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference59 articles.

1. Studies of tunnel MOS diodes I. Interface efects in silicon Schottky diodes;Card;J. Phys. D Appl. Phys.,1971

2. Metal-Semiconductor Schottky Barrier Junctions and Their Applications;Sharma,1984

3. Physics of Semiconductor Devices;Sze,1981

4. Electron transport at metal-semiconductor interfaces: general theory;Tung;Phys. Rev. B,1992

5. Correlation between barrier height and interface structure of Ag/Si (111) Schottky diodes;Schmitsdorf;Surf. Sci.,1995

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