Correlation between barrier height and interface structure of Schottky diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference31 articles.
1. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
2. Atomic structure of the NiSi2/(111)Si interface
3. Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces
4. Kinetics of Ordering and Growth;Feidenhans'l,1990
5. X-ray scattering study of Ag/Si(111) buried interface structures
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