Influence of GaN polarity and intermediate-temperature buffer layers on strain relaxation and defects-Reference-Cited by-同舟云学术

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Influence of GaN polarity and intermediate-temperature buffer layers on strain relaxation and defects

Published:2007-03 Issue:1 Volume:391 Page:6-11
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Peng C.X.,Weng H.M.,Zhu C.F.,Ye B.J.,Zhou X.Y.,Han R.D.,Fong W.K.,Surya C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Nitride Semiconductors: Electrical, Structural and Defects Properties;Ruvimov,2000

2. Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices

3. Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers

4. Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates

5. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

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1. The importance of nucleation layer for the GaN N-face purity on the annealed Al2O3 layers deposited by atomic layer deposition;Materials Science and Engineering: B;2022-10

2. Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC;Nanomaterials;2021-05-14

3. Magnetic and structural properties of Fe-implanted GaN at room temperature;Vacuum;2021-02

4. Influence of substrate nitridation on properties of GaN nanorods grown on molybdenum foil by laser molecular beam epitaxy;Physica B: Condensed Matter;2020-08

5. Study of Edge and Screw Dislocation Density in GaN/Al2O3 Heterostructure;Materials;2019-12-14

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