Electrical parameters of metal doped n-CdO/p-Si heterojunction diodes

Author:

Umadevi P.,Prithivikumaran N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Analysis of barrier height inhomogeneity in Au/n-GaAs Schottky diodes by tung model;Soylu;J. Alloy.,2010

2. The analysis of the series resistance and interface states of MIS schottky diodes at high temperature using I–V characteristics;Tataroglu;J. Alloy. Compd.,2009

3. The distribution of barrier heights in MIS type Schottky diodes from current–voltage–temperature (I–V–T) measurements;Tataroglu;J. Alloy. Compd.,2009

4. R.A. Ismail, S.K. Al-Ani, M.G. Faraj, Optoelectronic characteristics of n-CdO/p-Si heterojunction prepared by Spray pyrolysis, in: Proceedings of the World Renewable Energy Congress, Scotland, UK, May 22–27, 2005, pp. 513- 519, 2005.

5. Influence of F-doping on the transmittance and electron affinity of CdO thin films suitable for solar cells technology;Ferro;Sol. Energy Matter Sol. Cells,2000

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