Study on the effect of high magnetic field on electron transport in lattice mismatched n-GaN grown on sapphire based on two-layer model
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference31 articles.
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1. NH3-free growth of GaN nanostructure on n-Si (111) substrate using a conventional thermal evaporation technique;Journal of Crystal Growth;2012-06
2. Effects of dislocations on small signal high frequency hot electron mobility in n-GaN at low and high temperatures under high magnetic fields including hot phonon effect;Physica B: Condensed Matter;2011-04
3. Electron transport in two dimensional electron gas formed at the heterojunction of AlxGa(1−x)N/GaN at microwave frequencies;Microelectronics Reliability;2010-07
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