High-pressure phase transitions of Mg2Ge and Mg2Sn: First-principles calculations
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Electron-hole excitations inMg2SiandMg2Gecompounds
2. Preparation and Thermoelectric Properties of Mg2Si1−xGex (x=0.0∼0.4) Solid Solution Semiconductors
3. Temperature Dependence of Thermoelectric Properties of Mg2Si0.6Ge0.4
4. Thermoelectric properties of Bi-doped Mg2Si semiconductors
5. Thin film growth of semiconducting Mg2Si by codeposition
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1. Structural behavior and electrical transport properties of Mg2Ge under high pressure;Materials Today Communications;2024-06
2. Response of Mg2X (X = Si, Ge and Sn) compounds to extreme uniaxial compression: first-principles calculations;Modelling and Simulation in Materials Science and Engineering;2024-01-22
3. Electronic Structure and Thermoelectric Properties of Mg2Sn Films Fabricated by Using Co-Sputtering Process With Stoichiometric Modification;IEEE Access;2022
4. Mg2Sn Stannide under Pressure: First-Principles Evolutionary Search Results;Physics of the Solid State;2021-12-09
5. Phase relations and thermoelasticity of magnesium silicide at high pressure and temperature;The Journal of Chemical Physics;2021-03-21
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