The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics-Reference-Cited by-同舟云学术

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The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics

Published:2013-04 Issue: Volume:415 Page:77-81
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Tahir Muhammad,Sayyad Muhammad Hassan,Wahab Fazal,Khan Dil Nawaz,Aziz Fakhra

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Physics of Semiconductor Devices;Sze,1981

2. Electronic and interface state density distribution properties of Ag/p-Si Schottky diode

3. Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts

4. Metal–Semiconductor Contacts;Rhoderick,1988

5. Current‐voltage characteristic of Ti‐pSi metal‐oxide‐semiconductor diodes

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