Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357089
Reference14 articles.
1. GaAs metallization: Some problems and trends
2. The advanced unified defect model for Schottky barrier formation
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4. Chemical reaction and charge redistribution at metal–semiconductor interfaces
5. On the relationship between interfacial defects and Schottky barrier height in Ag, Au, and Al/n‐GaAs contacts
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