Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodeposition
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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2. Morphology and interfacial properties of microrelief metal–semiconductor interface
3. Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance–voltage technique
4. Theoretical study of the temperature dependence of electrical characteristics of Schottky diodes with an inverse near-surface layer
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