Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO-Reference-Cited by-同舟云学术

Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO

Published:2009-12 Issue:23-24 Volume:404 Page:4820-4822
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Mølholt T.E.,Mantovan R.,Gunnlaugsson H.P.,Bharuth-Ram K.,Fanciulli M.,Gíslason H.P.,Johnston K.,Kobayashi Y.,Langouche G.,Masenda H.,Naidoo D.,Ólafsson S.,Sielemann R.,Weyer G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

2. Material Design for Transparent Ferromagnets with ZnO-Based Magnetic Semiconductors

3. Anisotropic Ferromagnetism in Substituted Zinc Oxide

4. Search for ferromagnetism in transition-metal-doped piezoelectric ZnO

5. Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO

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