Improved AMOLED with aligned poly-Si thin-film transistors by laser annealing and chemical solution treatments
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Sequential lateral solidification of thin silicon films on SiO2
2. A proposed single grain-boundary thin-film transistor
3. Crystallization of silicon thin films by current-induced joule heating using a tungsten overcoat
4. Study of Crystal Growth Mechanism for Poly-Si Film Prepared by Excimer Laser Annealing
5. Aligned Polycrystalline Silicon Array Thin Film by XeCl Excimer Laser Annealing for AMOLED Displays
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1. Elevated‐Metal Metal‐Oxide Thin‐Film Transistors: A Back‐Gate Transistor Architecture with Annealing‐Induced Source/Drain Regions;Amorphous Oxide Semiconductors;2022-05-20
2. Mobility improvement of LTPS thin film transistor using stacked capping layer;Microelectronic Engineering;2021-07
3. Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films;Plasma Science and Technology;2012-10
4. Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing;Current Applied Physics;2011-05
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