Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures-Reference-Cited by-同舟云学术

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Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures

Published:2009-12 Issue:23-24 Volume:404 Page:4705-4707
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Feklisova O.V.,Yakimov E.B.,Arapkina L.V.,Chapnin V.A.,Chizh K.V.,Kalinushkin V.P.,Yuryev V.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

2. Coulomb Charging Effect in Self-Assembled Ge Quantum Dots Studied by Admittance Spectroscopy

3. Electronic structure of self-assembled InAs quantum dots in GaAs matrix

4. Space-charge spectroscopy of self-assembled Ge-rich dots on Si grown by MBE

5. Capacitance–voltage and admittance spectroscopy of self-assembled Ge islands in Si

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility;Nanoscale Research Letters;2011-09-05

2. Absorption of terahertz radiation in Ge/Si(001) heterostructures with quantum dots;JETP Letters;2010-12

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