Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-6-522.pdf
Reference59 articles.
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3. Yakimov AI, Dvurechenskii AV, Kirienko VV, Nikiforov AI: Ge/Si quantum-dot metal-oxide-semiconductor field-effect transistor. Appl Phys Lett 2002, 80(25):4783. 10.1063/1.1488688
4. Elkurdi M, Boucaud P, Sauvage S, Kermarrec O, Campidelli Y, Bensahel D, Saint-Girons G, Sagnes I: Near-infrared waveguide photodetec-tor with Ge/Si self-assembled quantum dots. Appl Phys Lett 2002, 80(3):509. 10.1063/1.1435063
5. David S, Kurdi ME, Boucaud P, Kammerer C, Xiang L, Sauvage S, Thanh VL, Sagnes I, Bouchier D, Lourtioz JM: Ge/Si self-assembled islands integrated in 2D photonic crystal microcavities for realisation of silicon-based light-emitting devices. Proc SPIE 2004, 5450: 369. 10.1117/12.546572
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