Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

Published:2007-12 Issue: Volume:401-402 Page:327-330
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Glaser E.R.,Murthy M.,Freitas J.A.,Storm D.F.,Zhou L.,Smith D.J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Luminescence properties of defects in GaN

2. Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition

3. Nature of acceptor states in magnesium-doped gallium nitride

4. Ground-state characteristics of an acceptor center in wide-gap semiconductors with a weak spin-orbit coupling

5. Characteristics of semi-insulating, Fe-doped GaN substrates

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1. Measurement of spin-polarized photoemission from wurtzite and zinc blende gallium nitride photocathodes;Applied Physics Letters;2024-07-15

2. Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of acceptors in GaN;Physical Review B;2024-07-15

3. Overcoming the compensation of acceptors in GaN:Mg by defect complex formation;APL Materials;2023-08-01

4. Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques;Crystals;2022-09-14

5. High thermal conductivity and thermal boundary conductance of homoepitaxially grown gallium nitride (GaN) thin films;Physical Review Materials;2021-10-14

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