Shallow and deep defects in Al Ga1−N structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer
2. Suppressing of optical quenching of deep defect-to-band transitions in AlGaN and GaN/AlGaN heterostructures
3. Deep level defects and doping in high Al mole fraction AlGaN
4. Metastability of Oxygen Donors in AlGaN
5. Unintentionally doped n-type Al0.67Ga0.33N epilayers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al$_{0.82}$In$_{0.18}$N Grown on GaN;Japanese Journal of Applied Physics;2011-10-20
2. Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN;Japanese Journal of Applied Physics;2011-10-01
3. AlGaN based highly sensitive radio-frequency UV sensor;Applied Physics Letters;2010-04-19
4. Photocurrent spectroscopy investigation of deep level defects in Mg-doped GaN and Mg-doped AlxGa1−xN (0.20;Applied Physics Letters;2009-09-28
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