Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation-Reference-Cited by-同舟云学术

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Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation

Published:2003-12 Issue: Volume:340-342 Page:1155-1158
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Ganichev S.D.,Danilov S.N.,Sollinger M.,Zimmermann J.,Moskalenko A.S.,Perel V.I.,Yassievich I.N.,Back C.,Prettl W.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Barrier interaction time in tunneling

2. L. Eaves, K.W.H. Stevens, F.W. Sheard, in: M.J. Kelly, C. Weisbuch (Eds.), The Physics and Fabrication of Microstructures and Microdevices, Springer, Berlin, 1986, pp. 343–349.

3. Effect of a magnetic field on thermally activated tunneling ionization of impurity centers in semiconductors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly superlinear giant terahertz photoconductance in GaAs quantum point contacts in the deep tunneling regime;Physical Review B;2021-11-12

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