Effect of pressure on oxygen diffusion jump in Si: quantum-chemical simulations
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Oxygen aggregation in Czochralski-grown silicon heat treated at 450 °C under compressive stress
2. Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures
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