Oxygen aggregation in Czochralski-grown silicon heat treated at 450 °C under compressive stress
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119527
Reference6 articles.
1. Thermal double donors in silicon
2. Coupled-Barrier Diffusion: The Case of Oxygen in Silicon
3. Theoretical studies on the core structure of the 450 °C oxygen thermal donors in silicon
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