Author:
Takakura K.,Ohyama H.,Yoshida T.,Murakawa H.,Rafí J.M.,Job R.,Ulyashin A.,Simoen E.,Claeys C.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Hydrogen passivation of the oxygen‐related thermal‐donor defect in silicon
2. Interaction of hydrogen and thermal donor defects in silicon
3. Hydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski Silicon
4. J.M. Rafı́, E. Simoen, C. Claeys, A.G. Ulyashin, R. Job, W.R. Fahrner, J. Versluys, P. Clauws, M. Lozano, F. Campabadal, in: B.O. Kolbesen, C. Claeys, P. Stallhofer, F. Tardif, T. Shaffner (Eds.), Proceedings of the ALTECH 2003, The Electrochemical Soc. Ser. PV 2003-03, 2003, pp. 96–105.
5. E. Simoen, C. Claeys, R. Job, A.G. Ulyashin, W.R. Fahrner, G. Tonelli, O. De Gryse, P. Clauws, J. Electrochem. Soc. 150 (2003) G510.
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