Strain release in InGaAs/InxAl1−xAs/InP heterostructures-Reference-Cited by-同舟云学术

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Strain release in InGaAs/InxAl1−xAs/InP heterostructures

Published:2003-12 Issue: Volume:340-342 Page:1082-1085
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Yastrubchak O.,Bak-Misiuk J.,Łusakowska E.,Kaniewski J.,Domagala J.Z.,Wosiński T.,Shalimov A.,Regiński K.,Kudla A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. The strain relaxation in a lattice-mismatched heterostructure

2. Relaxation enhancing interlayers (REIs) in threading dislocation reduction

3. Modeling cross-hatch surface morphology in growing mismatched layers

4. Limit cycle oscillation in negative differential resistance devices

5. Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress

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1. Unit cell distortion and surface morphology diversification in a SnTe/CdTe(001) topological crystalline insulator heterostructure: influence of defect azimuthal distribution;Journal of Materials Chemistry C;2022

2. Site-specific atomic order and band structure tailoring in the diluted magnetic semiconductor (In,Ga,Mn)As;Physical Review B;2021-02-02

3. Band structure evolution and the origin of magnetism in (Ga,Mn)As: From paramagnetic through superparamagnetic to ferromagnetic phase;Physical Review B;2018-03-13

4. Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates;Thin Solid Films;2018-03

5. Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers;Applied Physics Letters;2014-08-18

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