The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy
2. Low‐temperature anneal of the divacancy in p‐type silicon: A transformation from V2 to VxOy complexes?
3. Divacancy acceptor levels in ion-irradiated silicon
4. EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexes
5. Bulk damage effects in irradiated silicon detectors due to clustered divacancies
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3. Lifetime Control in Irradiated and Annealed Cz n‐Si: Role of Divacancy‐Oxygen Defects;physica status solidi (a);2019-07-17
4. Influence of Divacancy-Oxygen Defects on Recombination Properties of n-Si Subjected to Irradiation and Subsequent Annealing;Ukrainian Journal of Physics;2018-12-09
5. Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals;Semiconductors;2018-08-22
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