Degradation differences in the forward and reverse current gain of 25MeV Si ion irradiated SiGe HBT-Reference-Cited by-同舟云学术

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Degradation differences in the forward and reverse current gain of 25MeV Si ion irradiated SiGe HBT

Published:2014-09 Issue: Volume:449 Page:186-192
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Sun Yabin,Fu Jun,Xu Jun,Wang Yudong,Zhou Wei,Zhang Wei,Cui Jie,Li Gaoqing,Liu Zhihong

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Effects of irradiation induced lattice defects on standard trench and fine pattern trench IGBT characteristics

2. The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI

3. Combined effect of bias and annealing in gamma and neutron radiation assurance tests of SiGe bipolar transistors for HEP applications

4. The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors

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1. 50 MeV lithium ion irradiation studies on silicon-germanium heterojunction bipolar transistors at low temperature;Microelectronics Reliability;2022-10

2. Analysis of single-event effects in selected BOX-based FDSOI transistor and inverter;Radiation Physics and Chemistry;2021-09

3. Characterizing and modeling current gain degradation in bipolar transistor exposed to heavy ion radiation;Materials Science in Semiconductor Processing;2021-01

4. High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs;Nuclear Engineering and Technology;2019-08

5. Displacement Effects in SiGe HBT;Research on the Radiation Effects and Compact Model of SiGe HBT;2017-10-24

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