Nitrogen related vacancy formation in annealed GaInNAs quantum well superlattices-Reference-Cited by-同舟云学术

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Nitrogen related vacancy formation in annealed GaInNAs quantum well superlattices

Published:2006-04 Issue: Volume:376-377 Page:857-860
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Slotte J.,Saarinen K.,Pavelescu E.-M.,Hakkarainen T.,Karirinne S.,Jouhti T.,Pessa M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal

2. Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy

3. Formation of nonradiative defects in molecular beam epitaxial GaNxAs1−x studied by optically detected magnetic resonance

4. Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

5. (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys;Journal of Physics D: Applied Physics;2016-02-11

2. Positron states and annihilation in nanometric semiconducting superlattices;Physica B: Condensed Matter;2009-12

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